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| SI5461EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) --20 rDS(on) () 0.045 @ VGS = --4.5 V 0.060 @ VGS = --2.5 V 0.082 @ VGS = --1.8 V ID (A) --6.2 --5.4 --4.6 S 1206-8 ChipFETt 1 D D D D S D D G G 5.4 k Marking Code LA XX Lot Traceability and Date Code Bottom View Part # Code D P-Channel MOSFET Ordering Information: SI5461EDC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --20 12 Unit V --6.2 --4.5 --20 --2.1 2.5 1.3 --55 to 150 260 --4.5 --3.2 --1.1 1.3 0.7 W A _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. When using HBM. The MM rating is 300 V. c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71413 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-1 SI5461EDC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 4.5 V VDS = --16 V, VGS = 0 V VDS = --16 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --5.0 A Drain-Source On-State Resistancea rDS(on) VGS = --2.5 V, ID = --4.0 A VGS = --1.8 V, ID = --2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --5 V, ID = --5.0 A IS = --1.1 A, VGS = 0 V --20 0.037 0.050 0.066 12 --0.7 --1.2 0.045 0.060 0.082 S V --0.45 1.5 --1 --5 A mA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = --10 V, RL = 10 ID --1 A, VGEN = --4.5 V, RG = 6 VDS = --10 V, VGS = --4.5 V, ID = --5.0 A 12.5 2.0 4.0 2.5 4.5 27 15 3.5 8.0 40 25 mS 20 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%.m b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 4.5 thru 2.5 V 2V I D -- Drain Current (A) 20 TC = --55_C 16 I D -- Drain Current (A) 16 25_C 125_C Transfer Characteristics 12 12 8 1.5 V 4 0.5 V 0 0 2 4 6 8 10 VDS -- Drain-to-Source Voltage (V) 1V 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS -- Gate-to-Source Voltage (V) www.vishay.com 2-2 Document Number: 71413 S-21251--Rev. C, 05-Aug-02 SI5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) -- On-Resistance ( ) 3000 2500 C -- Capacitance (pF) Ciss 2000 1500 1000 500 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 Coss Capacitance 0.12 0.09 VGS = 1.8 V VGS = 2.5 V 0.06 VGS = 4.5 V 0.03 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 12 V GS -- Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 5 10 15 20 25 30 Qg -- Total Gate Charge (nC) VDS = 10 V ID = 5.0 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.0 A 1.4 r DS(on) -- On-Resistance ( ) (Normalized) 1.2 1.0 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) 10 TJ = 150_C r DS(on) -- On-Resistance ( ) ID = 5.0 A 1 TJ = 25_C 0.1 0.01 0.0 1 2 3 4 5 6 7 8 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71413 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-3 SI5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.4 0.3 0.2 0.1 0.0 --0.1 --0.2 --50 ID = 250 mA Power (W) 30 Threshold Voltage 50 Single Pulse Power 40 V GS(th) Variance (V) 20 10 --25 0 25 50 75 100 125 150 0 10 --3 10 --2 10 --1 1 Time (sec) 10 100 600 TJ -- Temperature (_C) Gate-Source Voltage vs. Gate Current 1000 10,000 1,000 800 TA = 25_C 100 10 1 400 IGSS (mA) 200 IGSS (mA) 0.1 0.01 0.001 0 0 2 4 6 8 10 12 VGS -- Gate-to-Source Voltage (V) 0.0001 0.10 Gate-Source Voltage vs. Gate Current 600 150_C 25_C 1 10 100 VGS -- Gate-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71413 S-21251--Rev. C, 05-Aug-02 SI5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71413 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-5 |
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